Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system
Patent
·
OSTI ID:1176672
A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).
- Research Organization:
- KAPL Inc., Schenectady, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC12-76SN00052
- Assignee:
- The United States of America as represented by the United States Department of Energy (Washington, DC)
- Patent Number(s):
- H001856
- Application Number:
- 08/740517
- OSTI ID:
- 1176672
- Country of Publication:
- United States
- Language:
- English
| Silicon photovoltaic cells in TPV conversion | report | December 1979 |
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