Processing approach towards the formation of thin-film Cu(In,Ga)Se2

Patent · Wed Jan 01 04:00:00 EST 2003

OSTI ID:875039

Beck, Markus E ^[1]; Noufi, Rommel ^[2]

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1. Falkensee, DE
2. Golden, CO

A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

• Research Organization: Midwest Research Institute
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 6518086
• OSTI ID: 875039
• Country of Publication: United States
• Language: English

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