Method of making compound semiconductor films and making related electronic devices
Patent
·
OSTI ID:872671
- Manhattan Beach, CA
- Tarzana, CA
- Northridge, CA
- Woodland Hills, CA
- Glendale, CA
A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.
- Research Organization:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- DOE Contract Number:
- FG03-96ER82191
- Assignee:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- Patent Number(s):
- US 5985691
- OSTI ID:
- 872671
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/
50
80
alloy
alloy phase
alloy-containing
alloys
applicable
appropriate
atmosphere
base
cells
compound
compound film
compound semiconductor
constituting
containing particles
depositing
devices
dopant
electronic
electronic device
electronic devices
elements
fabrication
film
films
form
forming
heating
ib-iiia
ib-iiia-via
ib-va-via
iib-iva-va
iiia
including
material
method
molar
molar percent
molar ratio
particles
percent
phase
powder
powder form
precursor
precursor film
prepared
preparing
ratio
reduced
related
related electronic
semiconductor
semiconductor film
semiconductor films
solar
solar cell
solar cells
source
source material
steps
substantially
substituted
substitutions
suitable
50
80
alloy
alloy phase
alloy-containing
alloys
applicable
appropriate
atmosphere
base
cells
compound
compound film
compound semiconductor
constituting
containing particles
depositing
devices
dopant
electronic
electronic device
electronic devices
elements
fabrication
film
films
form
forming
heating
ib-iiia
ib-iiia-via
ib-va-via
iib-iva-va
iiia
including
material
method
molar
molar percent
molar ratio
particles
percent
phase
powder
powder form
precursor
precursor film
prepared
preparing
ratio
reduced
related
related electronic
semiconductor
semiconductor film
semiconductor films
solar
solar cell
solar cells
source
source material
steps
substantially
substituted
substitutions
suitable