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Oxide-based method of making compound semiconductor films and making related electronic devices

Patent ·
OSTI ID:873283
 [1];  [2];  [3];  [4]
  1. Tarzana, CA
  2. Manhattan Beach, CA
  3. Woodland Hills, CA
  4. Glendale, CA
+ Show Author Affiliations
A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.
Research Organization:
MIDWEST RESEARCH INSTITUTE
DOE Contract Number:
AC02-83CH10093
Assignee:
International Solar Electronic Technology, Inc. (Inglewood, CA)
Patent Number(s):
US 6127202
OSTI ID:
873283
Country of Publication:
United States
Language:
English

References (3)

Thin-film solar cells journal January 1995
Thin-film copper indium diselenide prepared by selenization of copper indium oxide formed by spray pyrolysis journal January 1996
Preparation of copper indium diselenide by selenization of copper indium oxide journal August 1993

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Related Subjects

/438/257/
95
applicable
appropriate
articles including
atmosphere
base
based method
cells
compound
compound film
compound semiconductor
constitute
containing particles
depositing
devices
dopant
electronic
electronic device
electronic devices
elements
fabrication
film
films
form
forming
heating
ib-iiia-via
iib-iva-va
iiia
including
material
method
molar
molar percent
molar ratio
non-oxide
non-oxides
oxide-based
oxide-containing
oxides
particles
percent
powder
powder form
precursor
precursor film
preparatory
prepared
preparing
providing
ratio
reduced
related
related electronic
semiconductor
semiconductor film
semiconductor films
similarly
solar
solar cell
solar cells
source
source material
steps
substantially
substituted
substitutions
suitable
suitable material