Low thermal distortion extreme-UV lithography reticle

Patent · Mon Dec 31 23:00:00 EST 2001

OSTI ID:874689

Gianoulakis, Steven E ^[1]; Ray-Chaudhuri, Avijit K ^[2]

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1. Albuquerque, NM
2. Livermore, CA

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: EUV LLC (Santa Clara, CA)
• Patent Number(s): US 6441885
• OSTI ID: 874689
• Country of Publication: United States
• Language: English

Related Subjects

/355/378/430/
active
characterized
coated
coatings
defines
distortion
emissivity
engineering
enhanced
exhibit
extreme-uv
extreme-uv lithography
fabricated
heat
heat transfer
improving
level
lithography
mask
masks
material
non-active
omission
pattern
placement
quality
radiation
reduced
reducing
reflective
region
regions
reticle
reticles
selective
significantly
significantly reduce
substrate
surface
thermal
thermal distortion
transcription
transfer
ultimately
wafer