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Title: Low thermal distortion Extreme-UV lithography reticle and method

Abstract

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Inventors:
 [1];  [2]
  1. Albuquerque, NM
  2. Livermore, CA
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874463
Patent Number(s):
US 6395455
Assignee:
EUV LLC (Livermore, CA)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermal; distortion; extreme-uv; lithography; reticle; method; reticles; masks; significantly; reduced; emissivity; engineering; selective; placement; omission; coatings; reflective; fabricated; exhibit; enhanced; heat; transfer; reducing; level; ultimately; improving; quality; transcription; pattern; wafer; substrate; active; region; defines; mask; non-active; regions; characterized; surface; coated; radiation; material; heat transfer; significantly reduce; extreme-uv lithography; thermal distortion; /430/

Citation Formats

Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Low thermal distortion Extreme-UV lithography reticle and method. United States: N. p., 2002. Web.
Gianoulakis, Steven E, & Ray-Chaudhuri, Avijit K. Low thermal distortion Extreme-UV lithography reticle and method. United States.
Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Tue . "Low thermal distortion Extreme-UV lithography reticle and method". United States. https://www.osti.gov/servlets/purl/874463.
@article{osti_874463,
title = {Low thermal distortion Extreme-UV lithography reticle and method},
author = {Gianoulakis, Steven E and Ray-Chaudhuri, Avijit K},
abstractNote = {Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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