Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Low thermal distortion Extreme-UV lithography reticle and method

Patent ·
OSTI ID:874463
 [1];  [2]
  1. Albuquerque, NM
  2. Livermore, CA
+ Show Author Affiliations

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
EUV LLC (Livermore, CA)
Patent Number(s):
US 6395455
OSTI ID:
874463
Country of Publication:
United States
Language:
English

References (2)

Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme-ultraviolet lithography conference June 1998
Thermal management of EUV lithography masks using low-expansion glass substrates conference June 1999

Similar Records

Low thermal distortion extreme-UV lithography reticle
Patent · Sun Dec 31 23:00:00 EST 2000 · OSTI ID:874118
Low thermal distortion extreme-UV lithography reticle
Patent · Mon Dec 31 23:00:00 EST 2001 · OSTI ID:874689
Thermal{endash}mechanical performance of extreme ultraviolet lithographic reticles
Journal Article · Sat Oct 31 23:00:00 EST 1998 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:670206

Related Subjects

/430/
active
characterized
coated
coatings
defines
distortion
emissivity
engineering
enhanced
exhibit
extreme-uv
extreme-uv lithography
fabricated
heat
heat transfer
improving
level
lithography
mask
masks
material
method
non-active
omission
pattern
placement
quality
radiation
reduced
reducing
reflective
region
regions
reticle
reticles
selective
significantly
significantly reduce
substrate
surface
thermal
thermal distortion
transcription
transfer
ultimately
wafer