Low thermal distortion Extreme-UV lithography reticle and method

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874463

Gianoulakis, Steven E ^[1]; Ray-Chaudhuri, Avijit K ^[2]

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1. Albuquerque, NM
2. Livermore, CA

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: EUV LLC (Livermore, CA)
• Patent Number(s): US 6395455
• OSTI ID: 874463
• Country of Publication: United States
• Language: English

Related Subjects

thermal
distortion
extreme-uv
lithography
reticle
method
reticles
masks
significantly
reduced
emissivity
engineering
selective
placement
omission
coatings
reflective
fabricated
exhibit
enhanced
heat
transfer
reducing
level
ultimately
improving
quality
transcription
pattern
wafer
substrate
active
region
defines
mask
non-active
regions
characterized
surface
coated
radiation
material
heat transfer
significantly reduce
extreme-uv lithography
thermal distortion
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