skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal{endash}mechanical performance of extreme ultraviolet lithographic reticles

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.590474· OSTI ID:670206
 [1];  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Sandia National Laboratories, Livermore, California 94550 (United States)

Thermal deformation of reticles will likely become an important consideration for all advanced lithography techniques targeting 130 nm features and below. Such effects can contribute to image placement errors and blur. These issues necessitate the need to quantify the reticle distortion, induced by the absorption of illumination power, for candidate substrate and coating materials. To study the impact of various substrate and coating materials on reticle performance, detailed three-dimensional transient thermal and solid mechanical models have been developed and extensively applied to predict total placement errors, residual placement errors, and blur on an extreme ultraviolet lithography (EUVL) reticle during scanning. The thermal model includes a bidirectional scanning heat source representative of the illumination incident on the reticle. The heat loads on the reticle are characteristic of an EUVL engineering test stand with a wafer throughput of twenty 200 mm wafers per hour (assuming 80{percent} die coverage and 68{percent} exposure time). This article includes the results which describe the impact of (1) different substrate materials, (2) various degrees of contact conductance between the reticle and chuck, (3) pattern density and arrangement, and (4) temperature variations across the chuck. {copyright} {ital 1998 American Vacuum Society.}

OSTI ID:
670206
Report Number(s):
CONF-9805132-; ISSN 0734-211X; TRN: 9825M0031
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 16, Issue 6; Conference: 42. international conference on electron, ion, and photon beam technology and nanofabrication, Chicago, IL (United States), 26-29 May 1998; Other Information: PBD: Nov 1998
Country of Publication:
United States
Language:
English