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Method of dehydroxylating a hydroxylated material and method of making a mesoporous film

Patent ·
OSTI ID:874403
 [1];  [2];  [3];  [1];  [2]
  1. Richland, WA
  2. Kennewick, WA
  3. West Richland, WA
+ Show Author Affiliations

The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC06-76RL01830
Assignee:
Battelle Memorial Institute (Richland, WA)
Patent Number(s):
6,383,466
OSTI ID:
874403
Country of Publication:
United States
Language:
English

References (2)

Free-standing and oriented mesoporous silica films grown at the air–water interface journal June 1996
Organization of Organic Molecules with Inorganic Molecular Species into Nanocomposite Biphase Arrays journal August 1994

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Related Subjects

/423/516/
combination
compound
dehydroxylating
dehydroxylation
elevated
elevated temperature
embodiment
exposing
exposure
film
free
gas
hydrogen
hydroxylated
improvement
inert
inert gas
liquid
material
mesoporous
method
organic
organic compound
phase
porous film
procedure
repetition
separately
silica
silicon
soaking
solution
steps
substantially
substantially free
surface
surfactant
temperatures
templating
two-step
typically