Mesoporous silica film from a solution containing a surfactant and methods of making same
- West Richland, WA
- Cambridge, MA
- Richland, WA
- Kennewick, WA
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC06-76RL01830
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Number(s):
- US 6329017
- Application Number:
- 09/413,062
- OSTI ID:
- 874160
- Country of Publication:
- United States
- Language:
- English
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