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High numerical aperture ring field projection system for extreme ultraviolet lithography

Patent ·
OSTI ID:874124
 [1]
  1. 218 Eastridge Dr., San Ramon, CA 94583-4905
+ Show Author Affiliations
An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Hudyma; Russell (218 Eastridge Dr., San Ramon, CA 94583-4905)
Patent Number(s):
US 6318869
OSTI ID:
874124
Country of Publication:
United States
Language:
English

References (3)

Optical system design issues in development of projection camera for EUV lithography conference May 1995
EUV optical design for a 100-nm CD imaging system
  • Sweeney, Donald W.; Hudyma, Russell M.; Chapman, Henry N.
  • 23rd Annual International Symposium on Microlithography, SPIE Proceedings https://doi.org/10.1117/12.309559
conference June 1998
Design of reflective relay for soft x-ray lithography conference January 1991

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euv
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