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Ion-induced electron emission microscopy

Patent ·
OSTI ID:874008
 [1];  [1];  [2]
  1. Albuquerque, NM
  2. Brentwood, TN
+ Show Author Affiliations

An ion beam analysis system that creates multidimensional maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the secondary electrons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted secondary electrons are collected in a strong electric field perpendicular to the sample surface and (optionally) projected and refocused by the electron lenses found in a photon emission electron microscope, amplified by microchannel plates and then their exact position is sensed by a very sensitive X Y position detector. Position signals from this secondary electron detector are then correlated in time with nuclear, atomic or electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these secondary electrons in the fit place.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6291823
OSTI ID:
874008
Country of Publication:
United States
Language:
English

References (1)

Ion bombardment induced segregation effects in VDx studied by SIMS and SNMS journal May 1997

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Related Subjects

/250/
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optionally
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photon
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