A new approach to nuclear microscopy: The ion-electron emission microscope
- Sandia National Labs., Albuquerque, NM (United States)
- Staib Instrumente GmbH, Langenbach (Germany)
- Quantar Technologies Inc., Santa Cruz, CA (United States)
A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Microscopy or IEEM is described. Using MeV energy ions, IEEM is shown to be capable of Ion Beam Induced Charge Collection (IBICC) measurements in semiconductors. IEEM should also be capable of microscopically and multidimensionally mapping the surface and bulk composition of solids. As such, IIEM has nearly identical capabilities as traditional nuclear microprobe analysis, with the advantage that the ion beam does not have to be focused. The technique is based on determining the position where an individual ion enters the surface of the sample by projection secondary electron emission microscopy. The x-y origination point of a secondary electron, and hence the impact coordinates of the corresponding incident ion, is recorded with a position sensitive detector connected to a standard photoemission electron microscope (PEEM). These signals are then used to establish coincidence with IBICC, atomic, or nuclear reaction induced ion beam analysis signals simultaneously caused by the incident ion.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 290842
- Report Number(s):
- SAND--98-2133C; CONF-981046--; ON: DE99000588; BR: DP0102011
- Country of Publication:
- United States
- Language:
- English
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