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Highly charged ion secondary ion mass spectroscopy

Patent ·
OSTI ID:874007
A secondary ion mass spectrometer using slow, highly charged ions produced in an electron beam ion trap permits ultra-sensitive surface analysis and high spatial resolution simultaneously. The spectrometer comprises an ion source producing a primary ion beam of highly charged ions that are directed at a target surface, a mass analyzer, and a microchannel plate detector of secondary ions that are sputtered from the target surface after interaction with the primary beam. The unusually high secondary ion yield permits the use of coincidence counting, in which the secondary ion stops are detected in coincidence with a particular secondary ion. The association of specific molecular species can be correlated. The unique multiple secondary nature of the highly charged ion interaction enables this new analytical technique.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 6291820
OSTI ID:
874007
Country of Publication:
United States
Language:
English

References (4)

The Electron‐Beam Ion Trap journal October 1994
Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions journal March 1997
Emission of secondary particles from metals and insulators at impact of slow highly charged ions journal April 1997
Quantification of metal trace contaminants on Si wafer surfaces by Laser-SNMS and TOF-SIMS using sputter deposited submonolayer standards journal July 1996