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Highly charged ion based time of flight emission microscope

Patent ·
OSTI ID:873988
 [1];  [2];  [1];  [1];  [3]
  1. Livermore, CA
  2. San Francisco, CA
  3. Albuquerque, NM
+ Show Author Affiliations
A highly charged ion based time-of-flight emission microscope has been designed, which improves the surface sensitivity of static SIMS measurements because of the higher ionization probability of highly charged ions. Slow, highly charged ions are produced in an electron beam ion trap and are directed to the sample surface. The sputtered secondary ions and electrons pass through a specially designed objective lens to a microchannel plate detector. This new instrument permits high surface sensitivity (10.sup.10 atoms/cm.sup.2), high spatial resolution (100 nm), and chemical structural information due to the high molecular ion yields. The high secondary ion yield permits coincidence counting, which can be used to enhance determination of chemical and topological structure and to correlate specific molecular species.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 6288394
OSTI ID:
873988
Country of Publication:
United States
Language:
English

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