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High numerical aperture ring field projection system for extreme ultraviolet lithography

Patent ·
OSTI ID:873870
 [1];  [2]
  1. 218 Eastridge Dr., San Ramon, CA 94583-4905
  2. 50 Drake La., Fairfield, CT 06430-2925
+ Show Author Affiliations
An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 94583-4905);Shafer, David (50 Drake La., Fairfield, CT 06430-2925)
Patent Number(s):
US 6262836
OSTI ID:
873870
Country of Publication:
United States
Language:
English

References (3)

Optical system design issues in development of projection camera for EUV lithography conference May 1995
EUV optical design for a 100-nm CD imaging system
  • Sweeney, Donald W.; Hudyma, Russell M.; Chapman, Henry N.
  • 23rd Annual International Symposium on Microlithography, SPIE Proceedings https://doi.org/10.1117/12.309559
conference June 1998
Design of reflective relay for soft x-ray lithography conference January 1991

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/359/
12
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all-reflective
all-reflective optical
angle
aperture
aspheric
aspheric departure
camera
chief
chief ray
concave
concave mirror
configured
convex
convex mirror
degree
departure
euv
euv radiation
extreme
extreme ultraviolet
field
field projection
fifth
fifth convex
five
fourth
fourth concave
imaged
incidence
incidence angle
lithography
lithography camera
mask
mirror
mirrors
mirrors receive
mirrors receives
numerical
numerical aperture
optical
photolithography
photolithography camera
projection
projection photolithography
radiation
ray
receives
reflecting
reflecting surface
reflecting surfaces
reflective optical
six
six mirrors
six reflecting
sixth
sixth concave
source
substantially
surfaces
third
third convex
ultraviolet
ultraviolet lithography
wafer