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Title: Amorphous-diamond electron emitter

Abstract

An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Inventors:
 [1]
  1. (Livermore, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873619
Patent Number(s):
US 6204595
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
amorphous-diamond; electron; emitter; comprising; textured; silicon; wafer; overcoated; 200; ang; layer; nitrogen-doped; d-n; lowers; field; below; 20; volts; micrometer; demonstrated; compared; uncoated; diamond; coated; emitters; emission; fields; nearly; 60; produced; overcoating; nitrogen; atmosphere; filtered; cathodic-arc; enhanced; performance; voltages; required; field-emission; displays; practical; example; flat-panel; feds; cold-cathode; vacuum; electronics; electron emitter; silicon wafer; nitrogen atmosphere; filtered cathodic; cathode vacuum; emission displays; emitter comprising; field-emission displays; emission display; enhanced performance; /313/

Citation Formats

Falabella, Steven. Amorphous-diamond electron emitter. United States: N. p., 2001. Web.
Falabella, Steven. Amorphous-diamond electron emitter. United States.
Falabella, Steven. Mon . "Amorphous-diamond electron emitter". United States. https://www.osti.gov/servlets/purl/873619.
@article{osti_873619,
title = {Amorphous-diamond electron emitter},
author = {Falabella, Steven},
abstractNote = {An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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