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Amorphous-diamond electron emitter

Patent ·
OSTI ID:873619
 [1]
  1. Livermore, CA
+ Show Author Affiliations

An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 6204595
OSTI ID:
873619
Country of Publication:
United States
Language:
English

References (6)

Fabrication of amorphous diamond films journal December 1993
Internal stress reduction by nitrogen incorporation in hard amorphous carbon thin films journal June 1992
Structure and bonding studies of the C:N thin films produced by rf sputtering method journal November 1990
Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon journal August 1991
Properties of diamond-like carbon journal February 1992
Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition journal August 1991

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