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Title: Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

Abstract

The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronicmore » circuitry.« less

Inventors:
 [1];  [2]
  1. (Corrales, NM)
  2. (Edgewood, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873497
Patent Number(s):
US 6174820
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
silicon; oxynitride; sacrificial; material; microelectromechanical; devices; sio; forming; device; disclosed; conventional; materials; dioxide; silicate; glasses; compressively; strained; composition; selected; tensile-strained; substantially-stress-free; combination; limit; accumulation; compressive; stress; alternately; formed; entirely; advantages; gained; formation; polysilicon; substantially; free; residual; improving; reliability; ability; form; degree; complexity; layers; structural; compressively-strained; improved; manufacturability; resulting; elimination; wafer; distortion; arise; excess; accumulated; useful; types; including; accelerometers; sensors; motors; switches; coded; locks; flow-control; integrated; electronic; circuitry; sacrificial material; microelectromechanical devices; electronic circuit; substantially free; control device; electronic circuitry; silicon dioxide; silicate glass; residual stress; devices including; compressive stress; silicon oxynitride; mechanical device; electromechanical devices; mechanical devices; microelectromechanical device; coded lock; /438/216/257/

Citation Formats

Habermehl, Scott D., and Sniegowski, Jeffry J. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices. United States: N. p., 2001. Web.
Habermehl, Scott D., & Sniegowski, Jeffry J. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices. United States.
Habermehl, Scott D., and Sniegowski, Jeffry J. Mon . "Use of silicon oxynitride as a sacrificial material for microelectromechanical devices". United States. https://www.osti.gov/servlets/purl/873497.
@article{osti_873497,
title = {Use of silicon oxynitride as a sacrificial material for microelectromechanical devices},
author = {Habermehl, Scott D. and Sniegowski, Jeffry J.},
abstractNote = {The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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