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Method for integrating microelectromechanical devices with electronic circuitry

Patent ·
OSTI ID:872569
 [1];  [2];  [2]
  1. Austin, TX
  2. Albuquerque, NM
+ Show Author Affiliations

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5963788
OSTI ID:
872569
Country of Publication:
United States
Language:
English

References (4)

Polysilicon integrated microsystems: technologies and applications journal August 1996
A smart accelerometer with on-chip electronics fabricated by a commercial CMOS process journal March 1992
A surface micromachined silicon accelerometer with on-chip detection circuitry journal October 1994
High aspect ratio contacts: A review of the current tungsten plug process journal July 1997

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Related Subjects

/438/148/
acid
allows
annealed
buffered
cavity
circuitry
common
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device
devices
dioxide
disclosed
electromechanical devices
electronic
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electronic circuitry
encapsulated
encapsulates
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etchant
etching
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glass
hci
hf
hydrochloric
hydrochloric acid
hydrofluoric
hydrofluoric acid
integrating
integrating microelectromechanical
layer
material
mechanical device
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method
microelectromechanical
microelectromechanical device
microelectromechanical devices
mixture
nitride
operation
oxide
performed
peroxide-based
planarized
portion
preferably
preferably performed
prior
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processing
processing step
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protected
protection
reduces
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released
releasing
removed
sacrificial
sacrificial material
series
silicate
silicate glass
silicon
silicon dioxide
standard
standard processing
steps
substrate
time
titanium
titanium nitride
tungsten
two-ply
whereby