Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873425

Zhang, Ji-Guang ^[1]; Tracy, C Edwin ^[1]; Benson, David K ^[1]; Turner, John A ^[2]; Liu, Ping ^[3]

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1. Golden, CO
2. Littleton, CO
3. Lakewood, CO

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 6156395
• OSTI ID: 873425
• Country of Publication: United States
• Language: English

Related Subjects

plasma
enhanced
chemical
vapor
deposition
pecvd
method
forming
vanadium
oxide
films
thin-films
prepared
disclosed
film
substrate
utilizing
positioning
reaction
chamber
precursor
gas
comprised
vanadium-containing
chloride
inert
carrier
mixed
selected
amounts
hydrogen
oxygen
directed
optimize
final
properties
rf
generated
chemically
react
pressure
maintained
torr
finally
byproduct
gases
removed
enhanced chemical
inert carrier
chemically react
rf plasma
plasma reaction
plasma enhanced
vanadium oxide
product gases
oxide films
product gas
chemical vapor
carrier gas
reaction chamber
vapor deposition
oxide film
selected amount
chloride gas
films prepared
gas comprised
chamber deposition
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