Oxide-based method of making compound semiconductor films and making related electronic devices

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873283

Kapur, Vijay K ^[1]; Basol, Bulent M ^[2]; Leidholm, Craig R ^[3]; Roe, Robert A ^[4]

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1. Tarzana, CA
2. Manhattan Beach, CA
3. Woodland Hills, CA
4. Glendale, CA

A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: International Solar Electronic Technology, Inc. (Inglewood, CA)
• Patent Number(s): US 6127202
• OSTI ID: 873283
• Country of Publication: United States
• Language: English

Related Subjects

oxide-based
method
compound
semiconductor
films
related
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forming
film
steps
preparing
source
material
depositing
base
preparatory
heating
suitable
atmosphere
form
precursor
providing
oxide-containing
particles
including
iiia
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non-oxide
ib-iiia-via
oxides
constitute
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molar
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similarly
non-oxides
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substantially
reduced
prepared
powder
dopant
iib-iva-va
substituted
appropriate
substitutions
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fabrication
solar
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semiconductor film
precursor film
suitable material
molar ratio
source material
solar cell
solar cells
compound semiconductor
electronic devices
compound film
powder form
molar percent
semiconductor films
articles including
containing particles
electronic device
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/438/257/