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Title: Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

Abstract

The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Inventors:
 [1];  [1];  [1]
  1. Knoxville, TN
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
873218
Patent Number(s):
US 6114287
Assignee:
UT-Battelle, LLC (Oakridge, TN)
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; deforming; biaxially; textured; buffer; layer; metallic; substrate; articles; therefrom; provides; methods; deformed; epitaxial; formed; temperature; superconductors; photovoltaic; ferroelectric; optical; devices; epitaxially; deposited; biaxially-textured; substrates; mechanically; deformation; process; minimizes; eliminates; grooves; irregularities; maintaining; biaxial; texture; advantageously; altered; subsequent; heat; treatments; mechanical; densification; procedures; incorporated; processing; superconducting; films; powder; deposit; precursor; approaches; incurring; unfavorable; high-angle; grain; boundaries; temperature superconductors; subsequent heat; articles therefrom; formed therefrom; textured substrates; provides methods; layer formed; superconducting film; epitaxially deposited; temperature superconductor; biaxially textured; buffer layer; grain boundaries; heat treatment; optical device; epitaxial layer; metallic substrate; biaxial texture; optical devices; textured metallic; textured buffer; textured metal; precursor approaches; mechanically deformed; provides mechanical; textured substrate; superconducting films; textured article; conducting films; heat treatments; conducting film; textured articles; formation process; /505/117/

Citation Formats

Lee, Dominic F, Kroeger, Donald M, and Goyal, Amit. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom. United States: N. p., 2000. Web.
Lee, Dominic F, Kroeger, Donald M, & Goyal, Amit. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom. United States.
Lee, Dominic F, Kroeger, Donald M, and Goyal, Amit. 2000. "Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom". United States. https://www.osti.gov/servlets/purl/873218.
@article{osti_873218,
title = {Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom},
author = {Lee, Dominic F and Kroeger, Donald M and Goyal, Amit},
abstractNote = {The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.},
doi = {},
url = {https://www.osti.gov/biblio/873218}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Works referenced in this record:

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journal, April 1993


High‐field critical current densities in Bi 2 Sr 2 Ca 1 Cu 2 O 8+ x /Ag wires
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High critical current densities in Bi(2223)/Ag tapes
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Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition
journal, August 1990


a ‐axis oriented epitaxial YBa 2 Cu 3 O 7− x ‐PrBa 2 Cu 3 O 7− y heterostructures
journal, December 1990


Orientation Dependence of Grain-Boundary Critical Currents in Y Ba 2 Cu 3 O 7 δ Bicrystals
journal, July 1988


High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals
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High-J/sub c/ silver-sheathed Bi-based superconducting wires
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Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


Growth of C-axis oriented YBaCuO films on oxidized textured Ni sheets and on
journal, March 1991


Superconducting transport properties of grain boundaries in YBa 2 Cu 3 O 7 bicrystals
journal, March 1990


Superconducting YBa 2 Cu 3 O 6.8 films on metallic substrates using in situ laser deposition
journal, June 1990