Extreme ultraviolet lithography machine

Patent · Fri Dec 31 23:00:00 EST 1999

OSTI ID:872884

Tichenor, Daniel A ^[1]; Kubiak, Glenn D ^[2]; Haney, Steven J ^[3]; Sweeney, Donald W ^[4]

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1. Castro Valley, CA
2. Livermore, CA
3. Tracy, CA
4. San Ramon, CA

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: Euv LLC (Santa Clara, CA)
• Patent Number(s): US 6031598
• OSTI ID: 872884
• Country of Publication: United States
• Language: English

Related Subjects

/355/
10-14
arrangement
basically
beam
box
chamber
circuit
components
components located
connecting
directed
embodiment
euv
euvl
evacuated
extreme
extreme ultraviolet
formed
generator
illumination
integrated
integrated circuit
interconnected
isolated
isolator
isolators
laser
laser beam
laser plasma
lithography
located
machine
main
mask
mirror
mounted
mounting
multiple
nine
nm
operates
optical
optical arrangement
optical component
optical components
optics
patterned
photon
plasma
plasma generator
produces
producing
projection
projection optics
reflected
reticle
soft
soft x-ray
source
structure
substrate
support
support structure
target
transistors
transport
transport tube
tube
ultraviolet
ultraviolet lithography
utilized
utilizes
via
vibration
wavelength
x-ray
x-ray photon