EUV lithography reticles fabricated without the use of a patterned absorber
Patent
·
OSTI ID:1175748
Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
- Research Organization:
- The EUV LLC, Santa Clara, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The EUV LLC (Santa Clara, CA)
- Patent Number(s):
- 7,049,033
- Application Number:
- 10/631,359
- OSTI ID:
- 1175748
- Country of Publication:
- United States
- Language:
- English
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