Method for fabricating reticles for EUV lithography without the use of a patterned absorber
- Los Altos, CA
- San Ramon, CA
- Sunol, CA
Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 6,635,391
- Application Number:
- 09/752,887
- OSTI ID:
- 921903
- Country of Publication:
- United States
- Language:
- English
Increase of multilayer x‐ray reflectivity induced by pulsed laser heating
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journal | June 1994 |
Maskless extreme ultraviolet lithography
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journal | January 1999 |
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