Low work function, stable compound clusters and generation process
Patent
·
OSTI ID:872837
- Concord, CA
- Berkeley, CA
- Livermore, CA
Low work function, stable compound clusters are generated by co-evaporation of a solid semiconductor (i.e., Si) and alkali metal (i.e., Cs) elements in an oxygen environment. The compound clusters are easily patterned during deposition on substrate surfaces using a conventional photo-resist technique. The cluster size distribution is narrow, with a peak range of angstroms to nanometers depending on the oxygen pressure and the Si source temperature. Tests have shown that compound clusters when deposited on a carbon substrate contain the desired low work function property and are stable up to 600.degree. C. Using the patterned cluster containing plate as a cathode baseplate and a faceplate covered with phosphor as an anode, one can apply a positive bias to the faceplate to easily extract electrons and obtain illumination.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 6019913
- OSTI ID:
- 872837
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/252/445/
600
alkali
alkali metal
angstroms
anode
apply
baseplate
bias
carbon
cathode
cluster
clusters
co-evaporation
compound
compound clusters
contain
containing
conventional
covered
cs
degree
depending
deposited
deposition
desired
distribution
easily
electrons
elements
environment
extract
faceplate
function
generated
generation
generation process
illumination
metal
nanometers
narrow
obtain
oxygen
oxygen environment
oxygen pressure
patterned
peak
phosphor
photo-resist
plate
positive
pressure
process
property
range
semiconductor
shown
size
size distribution
solid
solid semiconductor
source
stable
stable compound
substrate
substrate contain
substrate surface
substrate surfaces
surfaces
technique
temperature
tests
600
alkali
alkali metal
angstroms
anode
apply
baseplate
bias
carbon
cathode
cluster
clusters
co-evaporation
compound
compound clusters
contain
containing
conventional
covered
cs
degree
depending
deposited
deposition
desired
distribution
easily
electrons
elements
environment
extract
faceplate
function
generated
generation
generation process
illumination
metal
nanometers
narrow
obtain
oxygen
oxygen environment
oxygen pressure
patterned
peak
phosphor
photo-resist
plate
positive
pressure
process
property
range
semiconductor
shown
size
size distribution
solid
solid semiconductor
source
stable
stable compound
substrate
substrate contain
substrate surface
substrate surfaces
surfaces
technique
temperature
tests