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Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

Patent ·
OSTI ID:872800
 [1];  [2]
  1. Berkeley, CA
  2. Berlin, DE
+ Show Author Affiliations
A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 6011810
OSTI ID:
872800
Country of Publication:
United States
Language:
English

References (4)

Miniaturization of p  ‐Ge lasers: Progress toward continuous wave operation journal March 1996
Double acceptor doped Ge: A new medium for inter‐valence‐band lasers journal May 1996
Stimulated far-infrared emission from copper-doped germanium crystals journal March 1997
Polarization of the far‐infrared laser oscillation in p ‐Ge in Faraday configuration journal November 1987

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Related Subjects

/372/257/
acceptor
acceptors
beryllium
binding
binding energies
closed
closed cycle
comprising
continuous
continuously
copper
crystals
crystals doped
cycle
cycle refrigerator
dopants
doped
doped laser
doping
doping semiconductor
double
energies
energy
germanium
infrared
infrared laser
infrared lasers
inversion
larger
laser
laser comprising
lasers
method
mode
non-hydrogenic
non-hydrogenic acceptors
operate
operating
permitting
photons
population
population inversion
refrigerator
semiconductor
semiconductors
silicon
silicon crystal
terahertz
triple
tuned
zinc