Double acceptor doped Ge: A new medium for inter-valence-band lasers

Journal Article · Wed May 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116427· OSTI ID:284240

Bruendermann, E; Linhart, A M; Reichertz, L; Roeser, H P ^[1]; Dubon, O D; Hansen, W L; Sirmain, G; Haller, E E ^[2]

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1. DLR, Institute for Space Sensor Technology, D-12489 Berlin (Germany)
2. Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

We report on intervalence-band laser emission from Be- and Zn-doped germanium crystals. The duty cycle of 10{sup {minus}3} at a repetition rate of 1 kHz is one order of magnitude larger than the highest duty cycle reported for {ital p}-Ge lasers doped by group II acceptors. This improvement is due to the much larger hole binding energy of double acceptors Be and Zn which results in a strong reduction of the internal absorption of the generated far-infrared radiation. Laser action has been achieved with crystal volumes as small as 0.04 cm{sup {minus}3}, and a laser pulse length of 25 {mu}s has been reached. Germanium crystals doped with these acceptors may offer an opportunity for achieving the ultimate goal of continuous wave operation. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 284240
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 68; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
BERYLLIUM ADDITIONS
CRYSTAL DOPING
DESIGN
DOPED MATERIALS
GERMANIUM
SEMICONDUCTOR LASERS
ZINC ADDITIONS