Stimulated far-infrared emission from copper-doped germanium crystals

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118662· OSTI ID:526480

Sirmain, G ^[1]; Reichertz, L A ^[1]; Dubon, O D; Haller, E E ^[2]; Hansen, W L ^[1]; Bruendermann, E; Linhart, A M; Roeser, H P ^[3]

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1. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Department of Materials Science and Mineral Engineering and Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)
3. DLR, Institute for Space Sensor Technology, D-12489 Berlin (Germany)

We have detected stimulated far-infrared emission from copper-doped germanium single crystals. By varying the magnetic field between 1 and 2.3 T, we have achieved emission in the range of 70{endash}120 cm{sup {minus}1}. Laser action was observed for crystals with a copper acceptor concentration as high as 1.5{times}10{sup 15} cm{sup {minus}3}, a doping level that is considerably higher than that of any single or double acceptor doped Ge laser. Stimulated emission from Ge crystals with such a high Cu concentration is possible because only a small fraction of the copper acceptors is ionized during operation. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 526480
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
COPPER
COPPER ADDITIONS
DOPED MATERIALS
GERMANIUM
INFRARED RADIATION
LASER MATERIALS
MONOCRYSTALS
POPULATION INVERSION
SEMICONDUCTOR LASERS
STIMULATED EMISSION