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Infrared light sources with semimetal electron injection

Patent ·
OSTI ID:872719
 [1];  [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.
Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5995529
OSTI ID:
872719
Country of Publication:
United States
Language:
English

References (13)

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm journal March 1996
InAs 1− x Sb x /In 1− y Ga y As multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers journal June 1994
3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy journal October 1991
Type-II and type-I interband cascade lasers journal January 1996
Mid-IR interband cascade electroluminescence in type-II quantum wells journal January 1996
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions journal February 1994
Magnetophotoluminescence of biaxially compressed InAsSb quantum wells journal January 1995
n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy journal January 1996
InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm journal July 1995
InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition journal July 1996
Growth of n ‐ and p ‐type Al(As)Sb by metalorganic chemical vapor deposition journal February 1996
Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices journal December 1995
2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C journal September 1995

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