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Title: Infrared emitting device and method

Abstract

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Inventors:
 [1];  [1];  [1];  [1];  [1]
  1. (Albuquerque, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
870928
Patent Number(s):
US 5625635
Assignee:
Sandia Corporation () SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
infrared; emitting; device; method; comprises; iii-v; compound; semiconductor; substrate; grown; quantum-well; active; region; plurality; layers; formed; ternary; alloy; comprising; inassb; sandwiched; barrier; lattice; constant; larger; energy; bandgap; preferably; compressively; strained; increase; threshold; auger; recombination; provided; determining; preferred; thickness; embodiments; described; cladding; layer; optical; carrier; confinement; provide; waveguiding; light; generated; examples; set; forth; surface-; edge-emitting; diodes; leds; optically-pumped; laser; electrically-injected; diode; emission; devices; midwave; spectrum; microns; ternary alloy; emitting diodes; emitting diode; iii-v compound; light emission; quantum-well layer; quantum-well layers; lattice constant; semiconductor laser; alloy comprising; semiconductor substrate; active region; device comprises; diode laser; barrier layer; compound semiconductor; light emitting; barrier layers; light generated; semiconductor diode; cladding layer; set forth; layers formed; carrier confinement; energy band; emitting device; infrared emitting; energy bandgap; quantum-well active; emitting light; infrared region; /372/257/

Citation Formats

Kurtz, Steven R., Biefeld, Robert M., Dawson, L. Ralph, Howard, Arnold J., and Baucom, Kevin C. Infrared emitting device and method. United States: N. p., 1997. Web.
Kurtz, Steven R., Biefeld, Robert M., Dawson, L. Ralph, Howard, Arnold J., & Baucom, Kevin C. Infrared emitting device and method. United States.
Kurtz, Steven R., Biefeld, Robert M., Dawson, L. Ralph, Howard, Arnold J., and Baucom, Kevin C. Wed . "Infrared emitting device and method". United States. https://www.osti.gov/servlets/purl/870928.
@article{osti_870928,
title = {Infrared emitting device and method},
author = {Kurtz, Steven R. and Biefeld, Robert M. and Dawson, L. Ralph and Howard, Arnold J. and Baucom, Kevin C.},
abstractNote = {An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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