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Title: Infrared emitting device and method

Abstract

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Inventors:
 [1];  [1];  [1];  [1];  [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870928
Patent Number(s):
US 5625635
Assignee:
Sandia Corporation ()
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
infrared; emitting; device; method; comprises; iii-v; compound; semiconductor; substrate; grown; quantum-well; active; region; plurality; layers; formed; ternary; alloy; comprising; inassb; sandwiched; barrier; lattice; constant; larger; energy; bandgap; preferably; compressively; strained; increase; threshold; auger; recombination; provided; determining; preferred; thickness; embodiments; described; cladding; layer; optical; carrier; confinement; provide; waveguiding; light; generated; examples; set; forth; surface-; edge-emitting; diodes; leds; optically-pumped; laser; electrically-injected; diode; emission; devices; midwave; spectrum; microns; ternary alloy; emitting diodes; emitting diode; iii-v compound; light emission; quantum-well layer; quantum-well layers; lattice constant; semiconductor laser; alloy comprising; semiconductor substrate; active region; device comprises; diode laser; barrier layer; compound semiconductor; light emitting; barrier layers; light generated; semiconductor diode; cladding layer; set forth; layers formed; carrier confinement; energy band; emitting device; infrared emitting; energy bandgap; quantum-well active; emitting light; infrared region; /372/257/

Citation Formats

Kurtz, Steven R, Biefeld, Robert M, Dawson, L Ralph, Howard, Arnold J, and Baucom, Kevin C. Infrared emitting device and method. United States: N. p., 1997. Web.
Kurtz, Steven R, Biefeld, Robert M, Dawson, L Ralph, Howard, Arnold J, & Baucom, Kevin C. Infrared emitting device and method. United States.
Kurtz, Steven R, Biefeld, Robert M, Dawson, L Ralph, Howard, Arnold J, and Baucom, Kevin C. 1997. "Infrared emitting device and method". United States. https://www.osti.gov/servlets/purl/870928.
@article{osti_870928,
title = {Infrared emitting device and method},
author = {Kurtz, Steven R and Biefeld, Robert M and Dawson, L Ralph and Howard, Arnold J and Baucom, Kevin C},
abstractNote = {An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.},
doi = {},
url = {https://www.osti.gov/biblio/870928}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Works referenced in this record:

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
journal, October 1991


3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
journal, October 1994


InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm
journal, February 1994


Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
journal, May 1994


The growth of InP1-xSbx by metalorganic chemical vapor deposition
journal, October 1993


Band structure engineering of semiconductor lasers for optical communications
journal, August 1988


Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
journal, February 1994


The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition
journal, January 1993


Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system
conference, February 1991


InAsSb light emitting diodes and their applications to infra-red gas sensors
journal, May 1993


High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
journal, January 1994