Infrared emitting device and method

Kurtz, Steven R; Biefeld, Robert M; Dawson, L Ralph; Howard, Arnold J; Baucom, Kevin C

Infrared emitting device and method

Patent · Wed Jan 01 04:00:00 EST 1997

OSTI ID:870928

Kurtz, Steven R ^[1]; Biefeld, Robert M ^[1]; Dawson, L Ralph ^[1]; Howard, Arnold J ^[1]; Baucom, Kevin C ^[1]

Albuquerque, NM

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

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Research Organization:: SANDIA CORP

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation ()

Patent Number(s):: US 5625635

OSTI ID:: 870928

Country of Publication:: United States

Language:: English

References (17)

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The growth of InP1-xSbx by metalorganic chemical vapor deposition Biefeld, R. M.; Baucom, K. C.; Kurtz, S. R. Journal of Crystal Growth, Vol. 133, Issue 1-2 https://doi.org/10.1016/0022-0248(93)90101-2	journal	October 1993
Optically pumped laser oscillation at 3.9 μm from Al _0.5 Ga _0.5 Sb/InAs _0.91 Sb _0.09 /Al _0.5 Ga _0.5 Sb double heterostructures grown by molecular beam epitaxy on GaSb van der Ziel, J. P.; Chiu, T. H.; Tsang, W. T. Applied Physics Letters, Vol. 48, Issue 5 https://doi.org/10.1063/1.96537	journal	February 1986
3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy Menna, R. J.; Capewell, D. R.; Martinelli, Ramon U. Applied Physics Letters, Vol. 59, Issue 17 https://doi.org/10.1063/1.106101	journal	October 1991
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Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions Kurtz, S. R.; Biefeld, R. M.; Dawson, L. R. Applied Physics Letters, Vol. 64, Issue 7 https://doi.org/10.1063/1.111022	journal	February 1994
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Infrared emitting device and method

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