Infrared light sources with semimetal electron injection
Patent
·
OSTI ID:20013882
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GaInSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2--6 {mu}m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20013882
- Resource Relation:
- Other Information: PBD: 30 Nov 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Infrared light sources with semimetal electron injection
InAsSb-based mid-infrared lasers (3.8{endash}3.9 {mu}m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition
Patent
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Fri Jan 01 00:00:00 EST 1999
·
OSTI ID:20013882
InAsSb-based mid-infrared lasers (3.8{endash}3.9 {mu}m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
Journal Article
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Mon Jul 01 00:00:00 EDT 1996
· Applied Physics Letters
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OSTI ID:20013882
InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition
Conference
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Wed Oct 01 00:00:00 EDT 1997
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OSTI ID:20013882