Deposition of dopant impurities and pulsed energy drive-in

Patent · Thu Dec 31 23:00:00 EST 1998

OSTI ID:872363

Wickboldt, Paul ^[1]; Carey, Paul G ^[2]; Smith, Patrick M ^[3]; Ellingboe, Albert R ^[4]

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1. Walnut Creek, CA
2. Mountain View, CA
3. San Ramon, CA
4. Fremont, CA

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5918140
• OSTI ID: 872363
• Country of Publication: United States
• Language: English

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