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Title: Deposition of dopant impurities and pulsed energy drive-in

Abstract

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

Inventors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6332900
Patent Number(s):
US 5918140; A
Application Number:
PPN: US 8-876414
Assignee:
Univ. of California, Oakland, CA (United States) PTO; EDB-99-080209
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 16 Jun 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DOPING; ION BEAMS; LASER RADIATION; MELTING; SEMICONDUCTOR MATERIALS; BEAMS; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; MATERIALS; PHASE TRANSFORMATIONS; RADIATIONS; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Wickboldt, P., Carey, P.G., Smith, P.M., and Ellingboe, A.R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 1999. Web.
Wickboldt, P., Carey, P.G., Smith, P.M., & Ellingboe, A.R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, P., Carey, P.G., Smith, P.M., and Ellingboe, A.R. Tue . "Deposition of dopant impurities and pulsed energy drive-in". United States.
@article{osti_6332900,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, P. and Carey, P.G. and Smith, P.M. and Ellingboe, A.R.},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {6}
}