Deposition of dopant impurities and pulsed energy drive-in
Patent
·
OSTI ID:1176707
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- RE39988
- Application Number:
- 10/768,656; 5,918,140
- OSTI ID:
- 1176707
- Resource Relation:
- Patent File Date: 2001 Jun 29
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deposition of dopant impurities and pulsed energy drive-in
Deposition of dopant impurities and pulsed energy drive-in
New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)
Patent
·
Tue Jun 29 00:00:00 EDT 1999
·
OSTI ID:1176707
+1 more
Deposition of dopant impurities and pulsed energy drive-in
Patent
·
Fri Jan 01 00:00:00 EST 1999
·
OSTI ID:1176707
+1 more
New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)
Technical Report
·
Wed Mar 31 00:00:00 EDT 2021
·
OSTI ID:1176707