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Title: Deposition of dopant impurities and pulsed energy drive-in

Abstract

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Inventors:
; ; ;
Publication Date:
Research Org.:
The Regents of the University of California, Oakland, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176707
Patent Number(s):
RE39988
Application Number:
10/768,656
Assignee:
The Regents of the University of California (Oakland, CA) OSTI
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 2008. Web.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., & Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Tue . "Deposition of dopant impurities and pulsed energy drive-in". United States. https://www.osti.gov/servlets/purl/1176707.
@article{osti_1176707,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, Paul and Carey, Paul G. and Smith, Patrick M. and Ellingboe, Albert R.},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {1}
}

Patent:

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