Chemical vapor deposition of W-Si-N and W-B-N

Fleming, James G; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M; Custer, Jonathan S; Jones, Ronald V; Nicolet, Marc-A; Madar, Roland; Bernard, Claude

Chemical vapor deposition of W-Si-N and W-B-N

Patent · Fri Jan 01 04:00:00 EST 1999

OSTI ID:872354

Fleming, James G ^[1]; Roherty-Osmun, Elizabeth Lynn ^[1]; Smith, Paul M ^[1]; Custer, Jonathan S ^[1]; Jones, Ronald V ^[1]; Nicolet, Marc-A ^[2]; Madar, Roland ^[3]; Bernard, Claude ^[4]

Albuquerque, NM
Pasadena, CA
Eybens, FR
Brie et Angonnes, FR

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Research Organization:: SANDIA CORP

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5916634

OSTI ID:: 872354

Country of Publication:: United States

Language:: English

References (8)

Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems Reid, J. S.; Kolawa, E.; Nicolet, M-A. Journal of Materials Research, Vol. 7, Issue 9 https://doi.org/10.1557/JMR.1992.2424	journal	September 1992
Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si Kolawa, E.; Pokela, P. J.; Reid, J. S. IEEE Electron Device Letters, Vol. 12, Issue 6 https://doi.org/10.1109/55.82074	journal	June 1991
W-B-N diffusion barriers for Si/Cu metallizations Reid, J. S.; Liu, R. Y.; Smith, Paul Martin Thin Solid Films, Vol. 262, Issue 1-2 https://doi.org/10.1016/0040-6090(94)05810-5	journal	June 1995
Amorphous W40Re40B20 diffusion barriers for /Al and /Cu metallizations Kolawa, E.; Sun, X.; Reid, J. S. Thin Solid Films, Vol. 236, Issue 1-2 https://doi.org/10.1016/0040-6090(93)90686-J	journal	December 1993
Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics Dutron, A. -M.; Blanquet, E.; Ghetta, V. Le Journal de Physique IV, Vol. 05, Issue C5 https://doi.org/10.1051/jphyscol:19955135	journal	June 1995
TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices Eizenberg, M.; Littau, K.; Ghanayem, S. Applied Physics Letters, Vol. 65, Issue 19 https://doi.org/10.1063/1.112693	journal	November 1994
TiWN Schottky Contacts to n - G a _0.51 I n _0.49 P Lin, Kun-Chuan; Chang, Edward Y.; Wang, Sheng-Ping Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 8 https://doi.org/10.1143/JJAP.33.4546	journal	August 1994
Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉\|Cu metallizations Reid, J. S.; Kolawa, E.; Ruiz, R. P. Thin Solid Films, Vol. 236, Issue 1-2 https://doi.org/10.1016/0040-6090(93)90689-M	journal	December 1993

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Related Subjects

/427/
applications
barrier
based
boron
chemical
chemical vapor
comprising
depositing
deposition
diffusion
diffusion barrier
employing
film
method
micromachining
nitrogen
precursor
refractory
refractory base
result
silicon
sources
substrate
ternary
tungsten
useful
vapor
vapor deposition
w--b--n
w--si--n
w-b-n
w-si-n
wf

Chemical vapor deposition of W-Si-N and W-B-N

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References (8)

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