Chemical vapor deposition of W-Si-N and W-B-N

Patent · Tue Jun 29 04:00:00 EDT 1999

OSTI ID:6386243

Fleming, J G; Roherty-Osmun, E L; Smith, P M; Custer, J S; Jones, R V; Nicolet, M; Madar, R; Bernard, C

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corp., Albuquerque, NM (United States)
• Patent Number(s): US 5916634; A
• Application Number: PPN: US 8-724341
• OSTI ID: 6386243
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
BORON COMPOUNDS
BORON NITRIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
PRECURSOR
REFRACTORY METAL COMPOUNDS
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN NITRIDES
USES