Chemical vapor deposition of W-Si-N and W-B-N

Fleming, James G; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M; Custer, Jonathan S; Jones, Ronald V; Nicolet, Marc-A; Madar, Roland; Bernard, Claude

Title: Chemical vapor deposition of W-Si-N and W-B-N

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872354

Fleming, James G ^[1]; Roherty-Osmun, Elizabeth Lynn ^[1]; Smith, Paul M ^[1]; Custer, Jonathan S ^[1]; Jones, Ronald V ^[1]; Nicolet, Marc-A ^[2]; Madar, Roland ^[3]; Bernard, Claude ^[4]

Albuquerque, NM
Pasadena, CA
Eybens, FR
Brie et Angonnes, FR

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

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Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5916634

OSTI ID:: 872354

Country of Publication:: United States

Language:: English

References (8)

Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics Dutron, A. -M.; Blanquet, E.; Ghetta, V. Le Journal de Physique IV, Vol. 05, Issue C5 https://doi.org/10.1051/jphyscol:19955135	journal	June 1995
Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si Kolawa, E.; Pokela, P. J.; Reid, J. S. IEEE Electron Device Letters, Vol. 12, Issue 6 https://doi.org/10.1109/55.82074	journal	June 1991
Amorphous W40Re40B20 diffusion barriers for /Al and /Cu metallizations Kolawa, E.; Sun, X.; Reid, J. S. Thin Solid Films, Vol. 236, Issue 1-2 https://doi.org/10.1016/0040-6090(93)90686-J	journal	December 1993
TiWN Schottky Contacts to n - G a _0.51 I n _0.49 P Lin, Kun-Chuan; Chang, Edward Y.; Wang, Sheng-Ping Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 8 https://doi.org/10.1143/JJAP.33.4546	journal	August 1994
Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems Reid, J. S.; Kolawa, E.; Nicolet, M-A. Journal of Materials Research, Vol. 7, Issue 9 https://doi.org/10.1557/JMR.1992.2424	journal	September 1992
TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices Eizenberg, M.; Littau, K.; Ghanayem, S. Applied Physics Letters, Vol. 65, Issue 19 https://doi.org/10.1063/1.112693	journal	November 1994
Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉\|Cu metallizations Reid, J. S.; Kolawa, E.; Ruiz, R. P. Thin Solid Films, Vol. 236, Issue 1-2 https://doi.org/10.1016/0040-6090(93)90689-M	journal	December 1993
W-B-N diffusion barriers for Si/Cu metallizations Reid, J. S.; Liu, R. Y.; Smith, Paul Martin Thin Solid Films, Vol. 262, Issue 1-2 https://doi.org/10.1016/0040-6090(94)05810-5	journal	June 1995

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Related Subjects

chemical
vapor
deposition
w-si-n
w-b-n
method
depositing
ternary
refractory
based
film
substrate
employing
precursor
sources
tungsten
comprising
wf
silicon
boron
nitrogen
result
useful
diffusion
barrier
micromachining
applications
diffusion barrier
chemical vapor
vapor deposition
refractory base
/427/

Title: Chemical vapor deposition of W-Si-N and W-B-N

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References (8)

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