Apparatus and method for selective area deposition of thin films on electrically biased substrates

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872320

Zuhr, Raymond A ^[1]; Haynes, Tony E ^[2]; Golanski, Andrzej ^[3]

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1. Oak Ridge, TN
2. Knoxville, TN
3. Le Cheylas, FR

An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5910220
• OSTI ID: 872320
• Country of Publication: United States
• Language: English

Related Subjects

apparatus
method
selective
deposition
films
electrically
biased
substrates
beam
process
polarized
substrate
potential
applied
allows
ionized
particles
reach
selected
film
left
uncoated
held
repells
potential applied
beam deposition
film deposition
deposition process
electrically biased
polarized substrate
biased substrates
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