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Title: Process for forming silicon carbide films and microcomponents

Patent ·
OSTI ID:872105
 [1];  [2];  [2]
  1. Livermore, CA
  2. Berkeley, CA
+ Show Author Affiliations

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5861346
OSTI ID:
872105
Country of Publication:
United States
Language:
English

References (12)

Fullerene (C60) adsorption on Si surfaces journal April 1993
Growth of silicon carbide films via C60 precursors journal October 1994
Fabrication of SiC Films on Si(100) using a C60 molecular source journal June 1994
C58 production from dissociation of C60 by scattering from silica and highly oriented pyrolytic graphite journal September 1994
Synthesis of epitaxial β‐SiC by C 60 carbonization of silicon journal August 1995
Surface mobility of C 60 on SiO 2 journal September 1993
Sapphire (112¯0) surface: Structure and laser-induced desorption of aluminum journal March 1992
The chemisorption of C60 on Si(100)-(2 × 1) journal January 1993
Observation of C 60 cage opening on Si(111)‐(7×7) journal July 1993
Double domain solid C 60 on Si(111)7×7 journal March 1993
SiC microcomponents via reaction of C60 with silicon journal November 1994
Temperature effects of adsorption of C 60 molecules on Si(111)-(7×7) surfaces journal March 1994

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Process for forming silicon carbide films and microcomponents
Patent · Tue Jan 19 00:00:00 EST 1999 · OSTI ID:872105
SiC microcomponents via reaction of C[sub 60] with silicon
Journal Article · Tue Nov 01 00:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) · OSTI ID:872105
Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon
Technical Report · Thu Feb 01 00:00:00 EST 1996 · OSTI ID:872105

Related Subjects

process
forming
silicon
carbide
films
microcomponents
grown
substrates
surface
temperatures
900
1700
via
60
precursors
hydrogen-free
environment
selective
crystalline
growth
achieved
patterned
silicon-silicon
oxide
samples
sic
produced
reaction
probability
negligible
dioxide
1250
silicon substrates
silicon carbide
silicon substrate
silicon oxide
crystalline silicon
silicon dioxide
surface temperature
surface temperatures
selective crystalline
patterned silicon
forming silicon
carbide films
/438/117/427/