Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon

Technical Report · Thu Feb 01 04:00:00 EST 1996

DOI:https://doi.org/10.2172/231594· OSTI ID:231594

Hamza, A V; Balooch, M ^[1]

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1. Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Directorate

Epitaxial silicon carbide films are grown on Si(100) substrates at a surface temperature of 1,200 K via fullerene precursors. Films have been grown up to a thickness of 2,500 {angstrom}. The growth rate of the SiC film is not limited by the surface reaction rate of fullerene with silicon at these temperatures, rather by the arrival rate of the reactants Si (by diffusion from substrate or from gas phase) or fullerene. This results in rapid film growth. Films have been characterized by low energy electron diffraction, ultraviolet photoelectron spectroscopy and Auger electron spectroscopy. Stoichiometric, epitaxial SiC films are grown. Supply of silicon to the growing SiC surface via sublimation greatly reduces the tendency for silicon diffusion to form voids at the Si/SiC interface.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 231594
• Report Number(s): UCRL-JC--123187; CONF-960502--11; ON: DE96008758
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
EXPERIMENTAL DATA
SILICON CARBIDES
VAPOR PHASE EPITAXY
WORK FUNCTIONS