IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide
- Ioffe Institute (Russian Federation)
- Russian Academy of Sciences, Institute of Problems of Mechanical Engineering (Russian Federation)
Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm{sup –1} in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH{sub 4}) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl{sub 3}) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl{sub 3} on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.
- OSTI ID:
- 22771664
- Journal Information:
- Physics of the Solid State, Vol. 59, Issue 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7834
- Country of Publication:
- United States
- Language:
- English
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