SiC microcomponents via reaction of C[sub 60] with silicon
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
- Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 (United States)
Free silicon carbide microcomponents are produced on silicon wafers. Silicon carbide is selectively grown on silicon by reaction of C[sub 60] with the substrate at surface temperatures between 900 and 1200 K. Because of the large lattice mismatch ([similar to]20%), the adhesion of the silicon carbide film is weak after growth of 1--1.5 [mu]m thickness. An atomic force microscope tip can subsequently maneuver the microcomponent to a desired location on the wafer.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6820901
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:6; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for forming silicon carbide films and microcomponents
Process for forming silicon carbide films and microcomponents
Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy
Patent
·
Thu Dec 31 23:00:00 EST 1998
·
OSTI ID:872105
Process for forming silicon carbide films and microcomponents
Patent
·
Mon Jan 18 23:00:00 EST 1999
·
OSTI ID:321303
Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy
Technical Report
·
Wed Nov 30 23:00:00 EST 1994
·
OSTI ID:96642