Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy
- Colorado School of Mines, Golden, CO (United States)
- Lawrence Livermore National Lab., CA (United States)
The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 96642
- Report Number(s):
- UCRL-ID--114972-3; ON: DE95009444
- Country of Publication:
- United States
- Language:
- English
Similar Records
Critical issues in measuring the mechanical properties of hard films on soft substrates by nanoindentation techniques
Characterization of tribo-layer formed during sliding wear of SiC ball against nanocrystalline diamond coatings