Molecular dynamics simulations of nanoidentation of silicon nitride
Book
·
OSTI ID:364057
- Louisiana State Univ., Baton Rouge, LA (United States)
This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si{sub 3}N{sub 4}). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. The authors report load-displacement curves for several Si{sub 3}N{sub 4} configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si{sub 3}N{sub 4} for both tip and substrate are also reported.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); USDOE, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- OSTI ID:
- 364057
- Report Number(s):
- CONF-981104--
- Country of Publication:
- United States
- Language:
- English
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