Non-equilibrium formation of silicon nitride during both ball milling and ion bombardment

Book · Wed Dec 30 23:00:00 EST 1998

OSTI ID:323498

Li, Z L; Llewellyn, D J; Wong-Leung, J ^[1]; Giersig, M ^[2]; Chivers, D J ^[3]

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1. Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering
2. Hahn Meitner Inst., Berlin (Germany)
3. AEA Technology, Harwell (United Kingdom)

Phase evolution during ball milling of Si in NH{sub 3} gas and during subsequent annealing has been studied and compared with nitride formation during ion bombardment of Si. X-ray diffraction, differential thermal analysis, Rutherford backscattering and channeling, combustion analysis and transmission electron microscopy have been used as analytical techniques. Results have shown that an amorphous Si{sub x}N{sub y}(Fe) phase forms during milling which transforms into {alpha}-Si{sub 3}N{sub 4} and FeSi{sub 2} on annealing. During ion bombardment, slightly N-rich Si{sub 3}N{sub 4} is formed but it is mostly crystalline at temperatures between 150 and 450 C.

• OSTI ID: 323498
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
ANNEALING
EXPERIMENTAL DATA
ION BEAMS
MILLING
PHASE STUDIES
SILICON
SILICON NITRIDES
SYNTHESIS
X-RAY DIFFRACTION