Method for altering the luminescence of a semiconductor

Barbour, J Charles; Dimos, Duane B

Method for altering the luminescence of a semiconductor

Patent · Thu Dec 31 23:00:00 EST 1998

OSTI ID:872098

Barbour, J Charles ^[1]; Dimos, Duane B ^[1]

Albuquerque, NM

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

Research Organization:: AT & T CORP

DOE Contract Number:: AC04-76DP00789

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5858559

OSTI ID:: 872098

Country of Publication:: United States

Language:: English

References (6)

Three-Dimensional Quantum Well Effects in Ultrafine Silicon Particles Furukawa, Shoji; Miyasato, Tatsuro Japanese Journal of Applied Physics, Vol. 27, Issue Part 2, No. 11 https://doi.org/10.1143/JJAP.27.L2207	journal	November 1988
Quantum size effects on photoluminescence in ultrafine Si particles Takagi, H.; Ogawa, H.; Yamazaki, Y. Applied Physics Letters, Vol. 56, Issue 24 https://doi.org/10.1063/1.102921	journal	June 1990
Porous silicon oxynitrides formed by ammonia heat treatment Tsao, S. S.; Guilinger, T. R.; Kelly, M. J. Journal of Applied Physics, Vol. 67, Issue 8 https://doi.org/10.1063/1.346077	journal	April 1990
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Canham, L. T. Applied Physics Letters, Vol. 57, Issue 10, p. 1046-1048 https://doi.org/10.1063/1.103561	journal	September 1990
Quantum size effects on the optical band gap of microcrystalline Si:H Furukawa, Shoji; Miyasato, Tatsuro Physical Review B, Vol. 38, Issue 8 https://doi.org/10.1103/PhysRevB.38.5726	journal	September 1988
Putting Some Spark in Silicon A., I. Science, Vol. 252, Issue 5008 https://doi.org/10.1126/science.252.5008.923	journal	May 1991

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altering
bed whereby
described
described whereby
device
effective
emitting
emitting semiconductor
intensity
irradiated
light
light emitting
luminescence
method
particular
radiation
radiation source
region
selectively
semiconductor
silicon
source
whereby

Method for altering the luminescence of a semiconductor

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References (6)

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