Method for altering the luminescence of a semiconductor
Patent
·
OSTI ID:872098
- Albuquerque, NM
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 5858559
- OSTI ID:
- 872098
- Country of Publication:
- United States
- Language:
- English
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