Method for altering the luminescence of a semiconductor
Patent
·
OSTI ID:321306
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.
- Research Organization:
- AT&T Corporation
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,858,559/A/
- Application Number:
- PAN: 7-964,739
- OSTI ID:
- 321306
- Country of Publication:
- United States
- Language:
- English
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