Efficient semiconductor light-emitting device and method
A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,493,577/A/
- Application Number:
- PAN: 8-361,252
- OSTI ID:
- 201524
- Resource Relation:
- Other Information: PBD: 20 Feb 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Surface-emitting semiconductor laser for intracavity spectroscopy and microscopy
Visible light surface emitting semiconductor laser