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Efficient semiconductor light-emitting device and method

Patent ·
OSTI ID:870308
 [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5493577
OSTI ID:
870308
Country of Publication:
United States
Language:
English

References (10)

Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm journal May 1990
Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers journal November 1994
Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers journal January 1991
Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors journal August 1994
Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy journal September 1994
Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers journal September 1994
Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers journal July 1994
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers journal July 1994
Low threshold half-wave vertical-cavity lasers journal November 1994
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal November 1994

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/372/
active
active region
annular
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composition
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current
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efficiency
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emitting device
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formed
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lateral
lateral refractive
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light
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resonant-cavity
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semiconductor
semiconductor light-emitting
stacks
surface-emitting
surface-emitting laser
vcsel
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